A Simple Robust and Versatile MATLAB Formulation of the Dynamic Mem-diode Model for Bipolar-Type Resistive Random-Access Memory Devices

A Simple Robust and Versatile MATLAB Formulation of the Dynamic Mem-diode Model for Bipolar-Type Resistive Random-Access Memory Devices

VLSI

E Meghana1,ECE ,Institute of Aeronautical Engineering, Hyderabad, India

22951A0496@iare.ac.in

GUDIE: DR.S China Venkateshwarlu, Professor,ECE&IARE

c.venkateshwarlu@iare.ac.in

DR.V Siva Nagaraju, Professor,ECE,IARE

v.sivanagaraju@iare.ac.in

MS. Ms P.Ganga Bhavani,Assistant Professor,ECE,IARE

p.gangabhavani@iare.ac.in

ABSTRACT:

Modeling in an emerging technology like RRAM devices is one of the pivotal concerns for its development. In the current bibliography, most of the models face difficulties in implementing or simulating unconventional scenarios, particularly when dealing with complex input signals. In addition, circuit simulators like Spice require long running times for high-resolution results because of their internal mathematical implementation. In this work, a fast, simple, robust, and versatile model for RRAM devices built in MATLAB is presented. The proposed model is a recursive and discretized version of the dynamic memdiode model (DMM) for bipolar-type resistive switching devices originally implemented in LTspice. The DMM model basically consists of two coupled equations: one for the current (non-linear current generator) and a second one for the memory state of the device (time-dependent differential equation). This work presents an easy-to-use tool for researchers to reproduce the experimental behavior of their devices and predict the outcome from nontrivial experiments. Three study cases are reported, aimed at capturing different phenomenologies: a frequency effect study, a cycle-to-cycle variability fit, and a stochastic resonance impact analysis.