ADVANCEMENT IN NANOSCALE ELECTRONICS IN MOSFET

ADVANCEMENT IN NANOSCALE ELECTRONICS IN MOSFET

Dr.G.Anantha rao, Sruthi Kandi

Electronics and communication Engineering department

GMR Institute of Technology,

Rajam

Andhra Pradesh, India

Abstract —

          This research explores a novel approach for designing Cylindrical Surrounding Double-Gate (CSDG) MOSFETs with nanometer-scale precision through a layer-by-layer fabrication technique. Traditional top- down methods, such as photolithography and ion beam deposition, are widely used for semiconductor design but present challenges in creating complex heterostructures. In response, this study proposes an alternative method focusing on cylindrical structures to develop high-resolution morphological designs of CSDG MOSFETsThe research emphasizes the versatility of the proposed method, allowing the design of various cylindrical structures with distinct properties, including periodic and non-periodic arrangements, symmetric and asymmetric configurations, and nanometer-scale gaps/dots. The focus is on the development of a symmetric CSDG MOSFET concerning the center core, providing valuable insights for fabricating structures over the core of 2D Electron Gas (2DEG).

Keywords—

Cylindrical Surrounding Double-Gate MOSFET, Fabrication Steps Layer-by-Layer Approach Semiconductor Devices,Nanoscale Electronics ,Transistor Design ,Oxidation Process, Scalability, Simulation ,Oxidant Concentration.