Advances in CMOS Image Sensors and Transistors Leveraging Stochastic Nanomagnets: A Comprehensive Review

Accurate modeling and assessment of complex Complementary Metal-Oxide Semiconductor (CMOS) imaging sensors and transistors, in conjunction with randomized nanomagnets for distributed computation in radiated environments, are crucial for the development of robust electronic systems. The effectiveness and resilience of these intricate parts to radiation exposure is the subject of this study, which is becoming more and more important in applications including space missions, power plants, and high-altitude flying. To take into account the interaction between CMOS technology and the unpredictable behavior of nanomagnets, a comprehensive durability modeling technique is required. The methodology that has been suggested evaluates the susceptibility of image detectors and transistors to malfunctions caused by radiation, such as dislocation damage, single-event upsets (SEUs), and impacts of total ionizing dose (TID). The impact of radiation on the power characteristics and operational dependability of these components is investigated using state-of-the-art modeling tools and experimental data. The findings suggest that random nanomagnets can improve distributed computing devices’ resistance to radiation-induced failures. Through the provision of insights into reliability challenges and solutions for enhanced CMOS image sensors and transistors, this work advances the field of radiation-tolerant technologies. Future electronic device developers will find the suggested reliability modeling and evaluation methodology to be a useful resource for creating reliable devices that can resist harsh radioactive environments.