Design and Performance Analysis of a High-Gain GaN HEMT Low Noise Amplifier Using 150 nm Technology

In this endeavor, we utilized a GaN HEMT transistor to develop an RF amplifier that produced a stable, robust, and clear output. In order to ensure that the signal is amplified without distortion or noise, the circuit was modified with appropriate biasing and matching. The amplifier operates effi-ciently, as indicated by the findings. In conclusion, this design demonstrates that GaN HEMT devices are an excellent choice for the construction of effective and rapid RF amplifiers.

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