Design and Performance Evaluation of Conventional 6T vs. Single-Ended 6T SRAM Cell

Design and Performance Evaluation of Conventional 6T vs. Single-Ended 6T SRAM Cell

Kavya M P1, Nagaraj M G2, Pavan kumar P N3 ,Sharath N4,Shashank N P5

1Assistant Professor, 2Final year Student, 3Final year Student, 4Final year Student, 5Final year Student,

Department of Electronics and Communication Engineering P E S Institute of Technology and Management, Shimoga

Abstract -As the demand for low-power, high-performance memory systems grows, the design of efficient SRAM (Static Random Access Memory) cells becomes increasingly crucial. This paper explores the power consumption, performance, and stability of two SRAM cell designs: the conventional 6T and the Single Ended 6T SRAM. While the conventional 6T SRAM is prone to read disturb noise and high leakage power, it remains widely used due to its simplicity and compactness. To address these issues, the Single Ended 6T SRAM cell is introduced as an alternative, which reduces both power consumption and area while maintaining competitive performance. The study provides a detailed analysis of static and dynamic power consumption, read/write stability, and overall energy efficiency for both cell architectures. Simulation results show that the Single Ended 6T SRAM offers significant improvements in power reduction without compromising speed, making it a promising solution for future low-power, high-performance memory applications.

Keywords— SRAM cell, Pre-Charge Circuits, Sense Amplifiers, and Single-Ended vs. Conventional 6T SRAM Cell.