Harnessing Tunnel Field-Effect Transistors for Boolean Function Implementation

Harnessing Tunnel Field-Effect Transistors for Boolean Function Implementation

Dr. J.V Suman

Electronics and communication Engineering department

GMR Institute of Technology, Rajam

Andhra Pradesh, India

Nekkali Ramya

Electronics and communication Engineering department

GMR institute of Technology, Rajam

Andhra Pradesh, India

nekkaliramya@gmail.com

Abstract:
In the pursuit of advancing digital integrated circuits, the exploration of novel transistor technologies has become imperative. It presents a comprehensive exploration of the implementation of Boolean functions utilizing Tunnel Field-Effect Transistors (TFETs). TFETs offer unique advantages over traditional MOSFETs, such as reduced leakage current and lower power consumption, making them a promising candidate for next-generation digital circuitry.The acronym "DGTFET" typically stands for "Double Gate Tunnel Field-Effect Transistor." A Double Gate Tunnel Field-Effect Transistor is a type of transistor that has two gate electrodes instead of one, allowing for better control of the flow of electrical current. This design offers advantages in terms of improved performance, reduced leakage current, and enhanced scalability, making it suitable for advanced semiconductor applications. we also used twin double gate structures when implementing Boolean functions with Tunnel Field-Effect Transistors (TFETs) is like giving TFETs a special setup that makes them work better for making digital circuits.

Keywords: Tunnel Field-Effect Transistors (TFETs),Boolean Functions,Digital Circuit Design,Low-Power Implementation,CMOS Integration