Low power 7T SRAM cell optimization with 45nm Technology

Low power 7T SRAM cell optimization with 45nm Technology

Thirunahari Deekshitha Dept of ECE IARE

Dr. S China Venkateshwarlu Professor Dept of ECE IARE

Dr. V Siva Nagaraju Professor Dept of ECE IARE

Abstract - With the increasing need for low-power and high-speed memory in modern integrated circuits, Static Random Access Memory (SRAM) design has become a critical area of research. This paper presents a detailed analysis of the 7T SRAM cell architecture implemented in 45nm CMOS technology, evaluating its performance in comparison to conventional SRAM designs. The 7T SRAM cell introduces an additional transistor to improve read stability and reduce power consumption without significantly increasing area overhead. Circuit simulations are used to assess key performance metrics, including static noise margin (SNM), power consumption, access delay, and leakage power. The analysis reveals that the 7T SRAM cell provides a balanced trade-off between power efficiency and stability, offering improved read isolation over 6T cells while consuming less area and dynamic power than 8T or 10T designs. These characteristics make the 7T SRAM cell a promising solution for energy-constrained applications such as portable and embedded systems.

Key Words: Read stability, Write ability, Static noise margin (SNM), Power consumption, Delay analysis, Access time, Leakage power