Performance Analysis of 6T, 8T and 10T SRAM Cell in 45nm Technology

Performance Analysis of 6T, 8T and 10T SRAM Cell in 45nm Technology

Bolem BhumikaDept of ECE IARE

Dr. S China Venkateshwarlu Professor Dept of ECE IARE

Dr. V Siva Nagaraju Professor Dept of ECE IARE

Abstract - With the increasing demand for low-power and high-performance memory, Static Random Access Memory (SRAM) plays a critical role in modern semiconductor technology. This paper presents a comparative analysis of 6T, 8T, and 10T SRAM cells designed in 45nm technology, focusing on key performance metrics such as power consumption, read/write stability, delay, and leakage current. The study is conducted using circuit simulations to evaluate the trade-offs between these designs in terms of speed, robustness, and energy efficiency. The results demonstrate that while the 6T SRAM cell offers compactness and lower dynamic power, it suffers from read stability issues. The 8T and 10T cells, though consuming more area, provide improved stability and lower leakage power. The findings of this study are crucial for optimizing SRAM design for low-power applications

Key Words: Read stability,Write ability,Static noise margin (SNM),Power consumption,Delay analysis,Access time,Leakage power