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Paper ID:IJSREM68291

MITIGATION OF CRITICAL DELAY IN CARRY SKIP ADDERS USING FinFET 18nm TECHNOLOGY

Stream/Area:

-

Subject:

-

Paper ID:

IJSREM68291

Volume:

10 |

10 |

Oct 2026

Pages:

1-4

Publication Frequency:

Monthly (12 issues per year)

DOI
Digital Object Identifier
10.55041/IJSREM68291

License:International Journal of Scientific Research in Engineering and Management follows the Creative Commons Attribution 4.0 (CC BY 4.0) License, allowing free use and distribution with proper attribution.

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Authors

D.Sandeep

D.Sandeep

Electroics and communication engineering

CMR TECHNICAL CAMPUS

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M

M.Roopa

Electroics and communication engineering

CMR TECHNICAL CAMPUS

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SA

Shaik Adil

Electroics and communication engineering

CMR TECHNICAL CAMPUS

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K

K.Mounika

Electroics and communication engineering

CMR TECHNICAL CAMPUS

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Mentors

DS

Dilshad Shaik

Electroics and communication engineering

CMR TECHNICAL CAMPUS

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Abstract

The full adder is the basic building block of every arithmetic circuit, and its delay and power decide how fast and how efficiently a processor can compute. As planar CMOS is scaled down, short channel effects and leakage current make it difficult to keep both under control. This paper presents a carry skip adder built from a 10-transistor FinFET full adder cell realised in 18 nm technology. The cell uses XNOR gates and a multiplexer to produce the sum and the carry, so the slow AND-OR-Invert stage normally used for the carry is avoided. Four such cells are joined with a skip path to form a 4-bit carry skip adder, and a pipelined arrangement is used to shorten the longest carry path. The circuits are designed in Cadence Virtuoso using an 18 nm FinFET design kit, and the adder is also described in Verilog HDL and simulated in the Xilinx Vivado Design Suite for FPGA implementation. Simulation of the 8-bit carry skip adder confirms correct generation of the sum and the carry output. The proposed cell needs fewer transistors than the CMOS, pass-transistor, transmission-gate and GDI full adders reviewed in this paper, which makes it suitable for low power and high speed arithmetic units.

KEYWORDS

FinFET Full Adder Carry Skip Adder Gate Diffusion Input Critical Delay FPGA.

Cite This Article

D.Sandeep, M.Roopa, Shaik Adil, K.Mounika, Dilshad Shaik, "MITIGATION OF CRITICAL DELAY IN CARRY SKIP ADDERS USING FinFET 18nm TECHNOLOGY," International Journal of Scientific Research in Engineering and Management, vol. 10, no. 10, pp. 1-4, Oct 2026. https://doi.org/10.55041/IJSREM68291

Full Article/Conclusion

This paper presented a carry skip adder based on a 10-transistor FinFET full adder in 18 nm technology. The full adder generates the sum with two XNOR gates and the carry with a multiplexer, which removes the AOI stage from the carry path and reduces the critical delay. The cell uses fewer transistors than the CMOS, pass-transistor, transmission-gate and GDI adders reviewed here. Simulation of the 8-bit carry skip adder in Vivado confirmed correct sum and carry generation, and the design is suitable for FPGA implementation. Future work will report post-layout power, delay and area figures, and will study the effect of process variation using Monte Carlo analysis. The adder can then be applied in FIR filters and other arithmetic units where low power and high speed are required.

References

1)    K. Bagyalakshmi and M. Karpagam, “Performance enhancement of efficient process based on carry-skip adder for IoT applications,” Microprocessors and Microsystems, 2020. 2)    S. S. Kamlapurkar and Y. Lalitha, “Performance analysis and design of FinFET 32 nm based low power, low delay 4-bit ALU, carry save adder and multiplier for high-speed processors,” Materials Today: Proceedings, 2020. 3)    H. Taheri Tari et al., “Design of a high performance CNTFET-based full adder cell applicable in carry ripple, carry select and carry skip adders,” Microelectronic Engineering, 2019. 4)    P. Radhakrishnan and G. Themozhi, “FPGA implementation of XOR-MUX full adder based DWT for signal processing applications,” Microprocessors and Microsystems, 2019. 5)    T. F. Canan, S. Kaya, A. Karanth, H. Xin, and A. Louri, “Ambipolar SB-FinFET: A new path to ultra-compact sub-10 nm logic circuits,” IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 255–263, Jan. 2019. 6)    G. H. Bin Talib, A. H. El-Maleh, and S. M. Sait, “Design of fault tolerant adders,” Arabian J. Sci. Eng., vol. 43, pp. 6667–6692, 2018. 7)    Ch. Rajesh Babu, T. Venkatesh, and E. Jagadeeshwara Rao, “Conventional full adder FinFET implementation using transmission gate logic,” Int. J. Advanced Trends in Computer Science and Engineering, vol. 7, no. 6, Nov. 2018. 8)    T. N. Theis and H.-S. P. Wong, “The end of Moore’s law: A new beginning for information technology,” Computing in Science & Engineering, vol. 19, no. 2, pp. 41–50, Mar./Apr. 2017. 9)    M. Bahadori, M. Kamal, A. Afzali-Kusha, and M. Pedram, “High-speed and energy-efficient carry skip adder operating under a wide range of supply voltage levels,” IEEE Trans. VLSI Syst., vol. 24, no. 2, pp. 421–433, 2016. 10)  R. De Rose, M. Lanuzza, F. Frustaci et al., “Designing dynamic carry skip adders: Analysis and comparison,” Circuits, Systems, and Signal Processing, vol. 33, pp. 1019–1034, 2014.

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Publication Date

10/24/2026

Peer Review Type

Double-Blind Peer Review

Review Rounds: 2

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