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ArticlePeer ReviewedOpen AccessPlagiarism Passed
Paper ID:IJSREM49695

Study the applications and reliability of smart mosfet for Power switching

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-

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Paper ID:

IJSREM49695

Volume:

9 |

6 |

Jun 2025

Pages:

Publication Frequency:

Monthly (12 issues per year)

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License:International Journal of Scientific Research in Engineering and Management follows the Creative Commons Attribution 4.0 (CC BY 4.0) License, allowing free use and distribution with proper attribution.

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Authors

KU

Kolloju Ushasree

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Abstract

Smart MOSFETs play a critical role in power switching applications due to their high efficiency, integrated protection features, and improved thermal performance. This study explores the applications and reliability of Smart MOSFETs across automotive, industrial, consumer electronics, and smart grid sectors. The project includes OrCAD simulations to analysed the performance of Smart MOSFETs under various operating conditions. Key reliability factors such as thermal management, overcurrent protection, and electromagnetic interference (EMI) mitigation are evaluated. Failure modes such as thermal runaway, electrostatic discharge (ESD), and gate oxide breakdown are analysed, along with solutions to enhance durability. The study provides valuable insights into the optimization of Smart MOSFET-based power switching systems, contributing to advancements in next-generation semiconductor technologies. POWER SWITCHINGWITHOUT PROTECTION: The existing systems before Smart MOSFETs, power switching relied on BJTs, IGBTs, Thyristors, and Discrete MOSFETs, each with limitations. BJTs had high power loss, IGBTs were efficient but slower, and Thyristors suffered from slow response and latch-up effects. Discrete MOSFETs provided fast switching but lacked built-in protection. Smart MOSFETs improved efficiency by integrating self-protection, diagnostics, and fault detection, eliminating external circuits while enhancing reliability in modern applications. POWER SWITCHING WITH PROTECTION (SMART MOSFET): The proposed system integrates Smart MOSFET technology to enhance power switching efficiency and reliability in various applications. Advanced semiconductor materials (SiC/GaN) and built-in protection features such as overcurrent, overvoltage, and thermal management ensure optimal performance. Real-time diagnostics and adaptive switching mechanisms provide continuous monitoring, reducing failure risks. Data collected from OrCAD simulations will be analysed to evaluate thermal efficiency, failure modes, and protection mechanisms, ensuring a highly efficient, durable, and intelligent power switching solution for automotive, industrial, and renewable energy applications.

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Cite This Article

Kolloju Ushasree, "Study the applications and reliability of smart mosfet for Power switching," International Journal of Scientific Research in Engineering and Management, vol. 9, no. 6, Jun 2025.

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Publication Date

6/9/2025

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Double-Blind Peer Review

Review Rounds: 2

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The authors declare no conflict of interest related to this research work.

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